Power MOSFETS | Status :
Active
Automotive
MCMN2014HE3
- Package Type:DFN2020-6LE
- Packing Info: Tape&Reel:3Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Gate Threshold Voltage VGS(th) Min (V) |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCMN2014HE3 | Single | N | 12 | ±8.0 | 15 | 0.009 | 0.011 | 1.1 | No | 0.4 | 1337 | 228 | 2.4 | 31 | 5.3 |
| Part Number MCMN2014HE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 12 |
Gate-Source Voltage VGS (V) ±8.0 |
Drain Current ID (A) 15 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.009 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) 0.011 |
Gate Threshold Voltage VGS(th) Max (V) 1.1 |
ESD Diodes No |
Gate Threshold Voltage VGS(th) Min (V) 0.4 |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code | Packing Info |
|---|---|---|---|---|---|
| MCMN2014HE3 | DFN2020-6LE | DFN2020-6LE | 0.0098 | N2014 | Tape&Reel:3Kpcs/Reel; |
Environmental Information 
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| Halogen Free |
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