IGBT Discrete

When the application demands rugged performance, MCC’s discrete insulated gate bipolar transistors (IGBTs) use advanced field-stop trench technology to deliver various solutions in voltage classes to satisfy diverse application requirements. Our discrete IGBTs are available with or without fast and soft recovery anti-parallel FWD and include AEC-Q101 qualified options.

Part Number Helper Icon   Status Helper Icon   Compliance Helper Icon Number of Functions Helper Icon   Package Type Helper Icon   Collector‐Emitter
Voltage
VCE (V) Helper Icon  
DC Collector Currentt
@ Tc=100°C
IC (A) Helper Icon  
Collector‐Emitter
Saturation Voltage
VCE(sat) (V) Helper Icon  
Turn-On
Energy@TJ=25°C
Eon (mJ) Helper Icon  
Turn‐Off
Energyy@TJ=25°C
Eoff (mJ) Helper Icon  
Junction
Temperature
Tj [max] (°C) Helper Icon  
Power
Rating
PD(W) Helper Icon