Power MOSFETS | Status :
Active
MCQD05N06
- Package Type:SOP-8
- Packing Info:Tape&Reel:4Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCQD05N06 | Dual | N+N | 60 | ±20 | 5 | 0.035 | 0.045 | 1 | 2.5 | No | 150 | 30 | 20 | 1152 | 68 | 1.6 | 22.8 | 4.6 |
| Part Number MCQD05N06 | Number of Functions Dual | Channel N+N |
Drain-Source Voltage VDS (V) 60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 5 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.035 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.045 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 30 |
Pulsed Drain Current IDM(A) 20 |
Packing Information
Environmental Information 
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| Tin Whisker Test Report | Halogen Free |
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