Power MOSFETS | Status :
Active
MSJB17N80
- Package Type:D2-PAK
- Packing Info:Tape&Reel: 800pcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSJB17N80 | Single | N | 800 | ±30 | 17 | 0.29 | 2 | 4 | No | 150 | 300 | 68 | 1860 | 1495 | 180 | 56 | 26 |
| Part Number MSJB17N80 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 800 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 17 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.29 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 300 |
Pulsed Drain Current IDM(A) 68 |
Packing Information
Environmental Information 
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