Small Signal MOSFETS | Status : Active
Automotive

SI2102AHE3

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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
RDS(ON)
Max
@VGS=10V
(Ω)
RDS(ON)
Max
@VGS=4.5V
(Ω)
RDS(ON)
Max
@VGS=2.5V
(Ω)
Gate
Threshold
Voltage
VGS(th) Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
SI2102AHE3 Single N 20 ±10 2 0.08 0.098 0.5 1.1 No 150 210 36 0.357 3.2 0.8
Part Number SI2102AHE3 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 20
Gate-Source
Voltage
VGS (V)
 ±10
Drain
Current
ID (A)
 2
RDS(ON)
Max
@VGS=10V
(Ω)
 
RDS(ON)
Max
@VGS=4.5V
(Ω)
 0.08
RDS(ON)
Max
@VGS=2.5V
(Ω)
 0.098
Gate
Threshold
Voltage
VGS(th) Min
(V)
 0.5
Gate
Threshold
Voltage
VGS(th) Max
(V)
 1.1
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
SI2102AHE3 SOT-323 SOT-323 0.0050 TS2. Tape: 3K/Reel, 120K/Ctn.;

Environmental Information link icon

Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report Halogen Free
Tin Whisker Test Report Halogen Free

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