SIC MOSFETS | Status :
Active
SICB240N120H
- Package Type:D2-PAK
- Packing Info:Tape&Reel:800pcs/Reel
- Category:SIC MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SICB240N120H | Single | N | 1200 | -10/+25 | 13 | 1.5 | 4 | No | 175 | 100 | 23 | 559 | 100 | 47 |
| Part Number SICB240N120H | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 1200 |
Gate-Source Voltage VGS (V) -10/+25 |
Drain Current ID (A) 13 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.5 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 100 |
Pulsed Drain Current IDM(A) 23 |
Packing Information
Environmental Information 
Download
| MSL | Halogen Free | MTBF | FIT |
|---|---|---|---|
| 1 |
|
0.00 | 0.0 |
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