Power MOSFETS | Status :
Active
MCAC50N10Y
- Package Type:DFN5060
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCAC50N10Y | Single | N | 100 | ±20 | 50 | 0.006 | 0.01 | 1 | 3 | No | 150 | 100 | 200 | 3060 | 1557 | 78 | 64 | 20.7 |
| Part Number MCAC50N10Y | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 50 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.006 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.01 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 100 |
Pulsed Drain Current IDM(A) 200 |
Packing Information
Environmental Information 
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| Tin Whisker Test Report | Halogen Free |
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