 
                        
                            
                                Power MOSFETS | Status :
                                    Active
                            
                            
                        
                    MCU80P06Y
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
- MPN:MCU80P06Y-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) | Gate-Source Voltage VGS (V) | Drain Current ID (A) | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) | Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) | Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) | Gate Threshold Voltage VGS(th) Min (V) | Gate Threshold Voltage VGS(th) Max (V) | ESD Diodes | Junction Temperature Tj [max] (°C) | Single Pulsed Avalanche Energy EAS(mJ) | Pulsed Drain Current IDM(A) | Input Capacitance Ciss(pF) | Output Capacitance Coss(pF) | Power Rating PD(W) | Total Gate Charge Qg(nC) | Gate-Drain Charge Qgd(nC) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU80P06Y | Single | P | -60 | ±20 | -80 | 0.0084 | -2 | -4 | No | 150 | 400 | -320 | 5332 | 996 | 125 | 82 | 17 | 
| Part Number MCU80P06Y | Number of Functions Single | Channel P | Drain-Source Voltage VDS (V) -60 | Gate-Source Voltage VGS (V) ±20 | Drain Current ID (A) -80 | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0084 | Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) | Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) | Gate Threshold Voltage VGS(th) Min (V) -2 | Gate Threshold Voltage VGS(th) Max (V) -4 | ESD Diodes No | Junction Temperature Tj [max] (°C) 150 | Single Pulsed Avalanche Energy EAS(mJ) 400 | Pulsed Drain Current IDM(A) -320 | 
Packing Information
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