Power MOSFETS | Status : Active

MSJP11N65A

Part Number	Number of Functions	Channel	Drain-Source Voltage V_DS (V)	Gate-Source Voltage V_GS (V)	Drain Current I_D (A)	Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)	Gate Threshold Voltage VGS(th) Min (V)	Gate Threshold Voltage VGS(th) Max (V)	ESD Diodes	Junction Temperature Tj [max] (°C)	Single Pulsed Avalanche Energy E_AS(mJ)	Pulsed Drain Current I_DM(A)	Input Capacitance Ciss(pF)	Output Capacitance Coss(pF)	Power Rating P_D(W)	Total Gate Charge Qg(nC)	Gate-Drain Charge Qgd(nC)
MSJP11N65A	Single	N	650	±30	11	0.38			2	4	No	150	142	44	774	890	83	20	10

Part Number MSJP11N65A

Number of Functions Single

Channel N

Drain-Source
Voltage
V_DS (V) 650

Gate-Source
Voltage
V_GS (V) ±30

Drain
Current
I_D (A) 11

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω) 0.38

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)

Gate
Threshold
Voltage
VGS(th)
Min
(V) 2

Gate
Threshold
Voltage
VGS(th) Max
(V) 4

ESD
Diodes No

Junction
Temperature
Tj [max]
(°C) 150

Single Pulsed
Avalanche
Energy
E_AS(mJ) 142

Pulsed Drain
Current
I_DM(A) 44

Part Number	Package Type	Packing Specification	Component Weight (g)	Marking Code
MSJP11N65A	TO-220	TO-220	2.2400	MSJP11N65A

Reliability Report	Material Composition Data Sheet	Soldering Profile	Environmental Compliance
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Tin Whisker Test Report

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