Power MOSFETS | Status :
Active
MCU28P10Y
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU28P10Y | Single | P | -100 | ±20 | -28 | 0.058 | 0.065 | -1 | -2.5 | No | 150 | 110 | -112 | 2077 | 222 | 96 | 35.6 | 6.4 |
| Part Number MCU28P10Y | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -28 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.058 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.065 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -1 |
Gate Threshold Voltage VGS(th) Max (V) -2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 110 |
Pulsed Drain Current IDM(A) -112 |
Packing Information
Environmental Information 
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