Power MOSFETS | Status :
                                    Active
                                    
                        
                    
                                        Automotive
                                    
                            
                            MCU6D5N06YLQ
- Package Type:DPAK
 - Packing Info:Tape&Reel:2.5Kpcs/Reel;
 - Category:Power MOSFETS
 - MPN:MCU6D5N06YLQ-TP
 
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V)  | 
                                                    Gate-Source Voltage VGS (V)  | 
                                                    Drain Current ID (A)  | 
                                                    Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)  | 
                                                    Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)  | 
                                                    Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)  | 
                                                    Gate Threshold Voltage VGS(th) Min (V)  | 
                                                    Gate Threshold Voltage VGS(th) Max (V)  | 
                                                    ESD Diodes  | 
                                                    Junction Temperature Tj [max] (°C)  | 
                                                    Single Pulsed Avalanche Energy EAS(mJ)  | 
                                                    Pulsed Drain Current IDM(A)  | 
                                                    Input Capacitance Ciss(pF)  | 
                                                    Output Capacitance Coss(pF)  | 
                                                    Power Rating PD(W)  | 
                                                    Total Gate Charge Qg(nC)  | 
                                                    Gate-Drain Charge Qgd(nC)  | 
                                    
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU6D5N06YLQ | Single | N | 60 | ±20 | 80 | 0.0065 | 0.009 | 1.3 | 2.3 | No | 175 | 132 | 320 | 1746 | 320 | 88 | 27 | 3.9 | 
| Part Number MCU6D5N06YLQ | Number of Functions Single | Channel N | 
                                                    
                                                        Drain-Source Voltage VDS (V) 60  | 
                                                
                                                    
                                                        Gate-Source Voltage VGS (V) ±20  | 
                                                
                                                    
                                                        Drain Current ID (A) 80  | 
                                                
                                                    
                                                        Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0065  | 
                                                
                                                    
                                                        Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.009  | 
                                                
                                                    
                                                        Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)  | 
                                                
                                                    
                                                        Gate Threshold Voltage VGS(th) Min (V) 1.3  | 
                                                
                                                    
                                                        Gate Threshold Voltage VGS(th) Max (V) 2.3  | 
                                                
                                                    
                                                        ESD Diodes No  | 
                                                
                                                    
                                                        Junction Temperature Tj [max] (°C) 175  | 
                                                
                                                    
                                                        Single Pulsed Avalanche Energy EAS(mJ) 132  | 
                                                
                                                    
                                                        Pulsed Drain Current IDM(A) 320  | 
                                    
Packing Information
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