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Power MOSFETS | Status :
Active
MSJP20N65A
- Package Type:TO-220AB(H)
- Packing Info:Bulk:1Kpcs/Box;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSJP20N65A | Single | N | 650 | ±30 | 20 | 0.19 | 2 | 4 | No | 150 | 303 | 80 | 1750 | 583 | 73.5 | 55 | 25 |
| Part Number MSJP20N65A | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 650 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 20 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.19 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 303 |
Pulsed Drain Current IDM(A) 80 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
|---|---|---|---|---|
| MSJP20N65A | TO-220AB(H) | TO-220AB(H) | 1.9469 | MSJP20N65A |
Environmental Information 
Download
| Tin Whisker Test Report | Halogen Free |
|---|---|
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