Power MOSFETS | Status :
Active
MSJPF11N65
- Package Type:TO-220F
- Packing Info:Bulk:1Kpcs/Box;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSJPF11N65 | Single | N | 650 | ±30 | 11 | 0.38 | 2.5 | 4 | No | 150 | 211 | 33 | 901 | 50 | 31.3 | 21 | 7 |
| Part Number MSJPF11N65 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 650 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 11 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.38 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.5 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 211 |
Pulsed Drain Current IDM(A) 33 |
Packing Information
Environmental Information 
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